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Dean, G. Zetterstrom, J. We have Table 2. The bowing parameter c has the value 2. Making use of the same transition the one at the center of the zone throughout the solid solution system provides a value for the bowing parameter which can be compared with calculations; this is not appropriate for the value derived earlier [24] from data for two different electronic transitions in the GaP-rich and ZnSe-rich ends of the system.
The magnitude of the bowing parameter is close to those found in I I - V I solid solutions [25]. Fischer, Glicksman and Van Vechten [24] deduced a contribution to the bowing parameter c of only about 0. However, Zunger and Jaffe [27] pointed out that the assumptions in the virtual crystal approximation are not satisfied in solid solutions of a number of I I I - V compounds, in that the individual bonds preserve spacings close to those in the pure crystals.
Hence, although Vegard's law may be satisfied, the assumption of individual 'composite' potentials at regular anion and cation sites is not a good one. They find that the effect o f the retention of the identity of the bonds in x [ 0. The points plotted were obtained by: x - this paper; o - Y i m [ 1 ]; [] - Voitsekhovskii et al. These calculations have not yet been extended to the system studied here. In Fig. The curve drawn uses the value for the bowing parameter determined for the direct transition 2.
Such a large value could not be explained using the approach of Fischer, Glicksman and Van Vechten [24], and it would be rather different from the situation in solid solutions of the I I I - V compounds, where the bowings of the indirect transitions are smaller than those of the direct transitions [30].
We see that, at low solute concentrations, all of the measured electron energies for both the direct and the indirect transitions are considerably smaller than the values expected using an analysis which has been successful [26, 27] in fitting isovalent solid solutions.
The feature of this behavior in the GaP-ZnSe system and also noted for many other non-isovalent solid solution systems can be described as a rapid shrinking of the Vol. This shrinking is at least as large as 0. An obvious possible cause of this shrinking is the effect of the dilute solute ions on the electron energy levels. If there is some correlation in locations, and hence screening of the ion charge, the effective ion density will be decreased.
Buzevich, Skorobogutova and Khabarov [ 11 ] have discussed the local ordering question in related systems. However, the presence of this group of ions - screened, partially screened, locally orderd as the ions may be - is likely to contribute to the shrinking of the electron energy differences through their effect on the electronic states i. This problem is yet to be treated quantitatively.
Acknowledgements - One of the authors MG thanks the Department of Physics, Massachusetts Institute of Technology, for their hospitality during the academic year , when work on this paper was completed. Yim, J. Kressel, RCA Review 31, Sonomura, T. Miyauchi, Japan J. Catalano, R. Beaulieu, T. Gregg, P. Head, A. Glicksman, Solid State Commn. Voitsekhovskii, V.
Stetsenko, Ukr. USSR 24, Bertoti, E. Barta, J. Sviszt, Proc. Budapest Minagawa, J. Solids 34, Bodi, J. Solids 29, Borisov, V. Controlling the population and flow of charge carriers is the fundamental principle underlying modern semiconductor engineering.
Bloch, Felix. Note: this article is in German. Heitler, Walter, and Fritz London. This is one of over 2, courses on OCW. Explore materials for this course in the pages linked along the left.
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